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FQB25N33 330V N-Channel MOSFET
QFET
FQB25N33 330V N-Channel MOSFET
Features
* 25A, 330V, RDS(on) = 0.23 @VGS = 10V * Low gate charge (typical 58nC) * Low Crss (typical 40pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant
LE
REE I DF
September 2006 (R)
General Description
These N-Channel enhancement mode power field effect transistors are produced using Farichild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
* Qualified to AEC Q101
A
Absolute Maximum Ratings
Symbol VDSS Drain-Source Voltage ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current Parameter FQB25N33 330 25 16.0 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 30 370 25 37 4.5 3.1 250 2.0 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/oC
o o
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
M ENTATIO LE N MP
- Pulsed
Gate -Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalance Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25oC) * Power Dissipation (TC = 25oC) - Derate above 25oC
TJ, TSTG Operating and Storage Temperature TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
C C
Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient * Thermal Resistance, Junction to Ambient FQB25N33 0.5 40 62.5 Units
o o o
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2006 Fairchild Semiconductor Corporation FQB25N33 Rev. A
1
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FQB25N33 330V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB25N33
Device
FQB25N33
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25C unless otherwise noted
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage ID = 250A, VGS = 0V
o
Parameter
Test Conditions
Min
330 ------
Typ Max Units
-0.34 ------1 10 100 -100 V V/oC A nA nA
Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25 C Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Forward VDS = 330V,VGS = 0V VDS = 264V,TC =125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Drain to Source On Resistance Forward Transonductance VDS = VGS, ID = 250A VGS = 10V, ID = 12.5A, VDS = 50V, ID = 12.5A, (Note 4) 3.0 ---0.18 1 5.0 0.23 -V S
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz ---1510 290 40 2010 385 60 pF pF pF
Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDD = 165V, ID = 25A RGS = 25 (Note 4, 5) VDS = 297V, ID = 25A, VGS = 15V, (Note 4, 5) -------20 100 90 70 58 11.2 21 35 160 145 110 75 --ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0, IS = 25A VGS = 0, IS = 25A, dIF/dt = 100A/s (Note 4) --------275 3.6 25 100 1.5 --A A V ns C
Notes: 1: Repetitive Rating : Pluse width Limited by maximum junction temperature 2: L = 1.79mH, IAS = 25A, VDD = 50V, RG = 25, Starting TJ = 25oC 3: ISD 25A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25oC 4: Pulse Test : Pulse width 300s, Duty cycle 2% 5: Essentially independent of operating temperature
FQB25N33 Rev. A
2
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FQB25N33 330V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
100
VGS Top : 15.0 V 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V
100
ID, Drain Current [A]
ID, Drain Current [A]
10
10
150 C 25 C
o
o
-55 C
o
1
1
* Notes : 1. 250s Pulse Test o 2. TC = 25 C
* Notes : 1. VDS = 50V 2. 250s Pulse Test
0.1
0.1
1
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.45 0.40 0.35 0.30 0.25 0.20 0.15
* Note : TJ = 25 C
o
100
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
10
VGS = 10V
1
150 C
0.1
o
25 C
o
0.01
VGS = 15V
1E-3
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.10
0
10
20
30
40
50
60
1E-4 0.0
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
4000
Coss = Cds + Cgd Crss = Cgd
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 66V
10
VDS = 165V VDS = 264V
Capacitances [pF]
CAPACITANCE (pF)
3000
8
2000
Ciss
6
4
Coss
1000
Crss
* Note ; 1. VGS = 0 V 2. f = 1 MHz
2
* Note : ID = 25A
0
0 0.1
0
10
20
30
40
50
60
70
1
10
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQB25N33 Rev. A
3
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FQB25N33 330V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
* Notes : 1. VGS = 10 V 2. ID = 12.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
30
500
ID, Drain Current [A]
100
25
ID, DRAIN CURRENT (A)
100 s
20
1ms
10
10ms DC
15
1
Operation in This Area is Limited by R DS(on)
10
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
5
0.1
1
10
100
1000
0 25
50
75
100
o
125
150
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
2
(t), Thermal Response
1
D = 0 .5 0 .2
0 .1
0 .1 0 .0 5 0 .0 2 0 .0 1
PDM t1 t2
M ax. (t)
JC
Z
0 .0 1
s in g le
p u ls e
* N o te s : 1 . Z JC (t) = 3. T
JM
0 .5 = P
0
C /W *Z
0
2 . D u ty F a c to r , D = t1/t2 -T
C DM
JC
1 E -3 10
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
t1, S q u a re
W ave
P u ls e
D u r a t io n
[s e c ]
FQB25N33 Rev. A
4
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FQB25N33 330V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB25N33 Rev. A
5
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FQB25N33 330V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB25N33 Rev. A
6
www.fairchildsemi.com
FQB25N33 330V N-Channel MOSFET
FQB25N33 Rev. A
7
www.fairchildsemi.com
FQB25N33 330V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
FQB25N33 Rev. A
8
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